Thermal design and performance evaluation of GaN power stage in a 4-level totem-pole PFC

Omer Faruk Goksu, Enis Baris Bulut, Mehmet Onur Gulbahce*, Serkan Dusmez

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Araştırma sonucu: ???type-name???Makalebilirkişi

Özet

Low voltage Gallium Nitride (GaN) power devices are enabling the development of single-phase multi-level power factor correction (PFC) converters for high power density designs due to their superior figure-of-merit. However, despite their lower power losses compared to Si MOSFETs, it is still challenging to remove a few watts of power loss from small packages, which presents a barrier for using GaN in high power converters. To address this issue, this study establishes a 3-D thermal model for chip-scale package GaN devices, and analyses various heat sinking methods for a power stage of a single-phase 4-level PFC structure using the finite element method. The thermal performances of GaN devices with different layouts, board types, and thermal via patterns have been analyzed and verified experimentally on a power stage of a 4-level GaN PFC rated for 3.7 kW, where each of the six GaN devices dissipates 2.3 W.

Orijinal dilİngilizce
Makale numarası154981
DergiAEU - International Journal of Electronics and Communications
Hacim173
DOI'lar
Yayın durumuYayınlandı - Oca 2024

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Publisher Copyright:
© 2023 Elsevier GmbH

Finansman

The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Serkan Dusmez reports financial support was provided by 2232 International Fellowship for Outstanding Researchers Program of Scientific and Technological Research Council of Turkey (Project No: 118C374).

FinansörlerFinansör numarası
Türkiye Bilimsel ve Teknolojik Araştırma Kurumu118C374

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