The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO₂:PVC) interface

The RuO₂-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO₂:PVC were investigated using the I–V characteristics in the dark and under definite illuminations. The values of saturation current (I ₀), barrier height (Φ_B0) at zero-bias, ideality factor (n), series and shunt resistances (R _s and R _sh) were calculated by using different methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profiles of interface-states (N _ss) for each illumination level. Moreover, the open-circuit voltage (V _oc), short circuit current (I _sc), filling factor (FF), and efficiency (η) of the fabricated Schottky structure were found as 0.118 V, 6.4 μA, 46%, and 0.088% under 50 mW/cm⁻², respectively. According to the findings, the RuO₂:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes. Graphical abstract: [Figure not available: see fulltext.].