The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂ and TIGaSe₂

Keyphrases

• Impurity Effect 100%
• Incommensurate Phase 100%
• Ferroelectric Semiconductors 100%
• TlInS2 100%
• Phase Transition Temperature 66%
• Temperature Dependence 66%
• Wave Model 33%
• Annealing 33%
• Dielectric Constant 33%
• Thermally Activated Processes 33%
• Defect Density 33%
• Cooling Method 33%
• Heating Process 33%
• Density Wave 33%
• Memory Effect 33%
• Modulated Waves 33%
• Charge Carriers 33%
• TlGaSe2 33%
• Impurity States 33%
• Commensurate Phases 33%
• CRISTAL 33%

Material Science

• Ferroelectric Material 100%
• Permittivity 50%
• Annealing 50%
• Defect Density 50%
• Charge Carrier 50%
• Memory Effect 50%

Chemistry

• Chilling 50%