TY - GEN
T1 - The degradation of MOSFETs induced by the via etching of interlayer low-k polymers
AU - Trabzon, Levent
AU - Awadelkarim, Osama O.
PY - 2001
Y1 - 2001
N2 - We report on the effects of via etching through two low-k polymers (FLARE and BCB) used as interlayer dielectrics, on the prerformance of 0.35 - m long n-channel MOSFETs with 45-Å-thick gate oxides. It is observed that the via etching of the polymers damages the MOSFET and that this damage is severer in the case of BCB via etching. The inclusion of and insulating Si3N4 layer underneath the polymer is found to be very effective in reducing the MOSFET's damage. Alternatively, annealing in forming gas at 350 °C for 30 min after the via etching can further eliminate device damage.
AB - We report on the effects of via etching through two low-k polymers (FLARE and BCB) used as interlayer dielectrics, on the prerformance of 0.35 - m long n-channel MOSFETs with 45-Å-thick gate oxides. It is observed that the via etching of the polymers damages the MOSFET and that this damage is severer in the case of BCB via etching. The inclusion of and insulating Si3N4 layer underneath the polymer is found to be very effective in reducing the MOSFET's damage. Alternatively, annealing in forming gas at 350 °C for 30 min after the via etching can further eliminate device damage.
UR - https://www.scopus.com/pages/publications/78751555383
U2 - 10.1109/ICM.2001.997498
DO - 10.1109/ICM.2001.997498
M3 - Conference contribution
AN - SCOPUS:78751555383
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 103
EP - 106
BT - ICM 2001 Proceedings - 13th International Conference on Microelectronics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th International Conference on Microelectronics, ICM 2001
Y2 - 29 October 2001 through 31 October 2001
ER -