TEK KAPI SÜRÜCÜLÜ 1200V SERİ BAǦLI GAN-IGBT HİBRİT ANAHTAR

GaN FETs offer higher switching speeds and lower gate drive losses compared to IGBTs. Their low parasitic capacitance allows for achieving higher switching frequencies. Due to the limited Vds voltage of GaN FETs, they must be connected in series for high-voltage power conversion applications, necessitating voltage balancing. This study proposes a gate driving scheme and circuitry to control an 800V / 16A hybrid switch using a single gate driver while balancing voltage across the series-connected GaN FETs. As a result of using the hybrid configuration, conduction loss on GaN FETs has been reduced by 70.7%, and the cost of the switching unit has decreased significantly, making it an alternative low-switching loss and high power switching unit.