Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells

H. Karaagac*, M. Parlak, M. Saif Islam

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Özet

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıFunctional Nanowires and Nanotubes
Sayfalar49-54
Sayfa sayısı6
DOI'lar
Yayın durumuYayınlandı - 2012
Harici olarak yayınlandıEvet
Etkinlik2011 MRS Fall Meeting - Boston, MA, United States
Süre: 28 Kas 20112 Ara 2011

Yayın serisi

AdıMaterials Research Society Symposium Proceedings
Hacim1408
ISSN (Basılı)0272-9172

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???event.eventtypes.event.conference???2011 MRS Fall Meeting
Ülke/BölgeUnited States
ŞehirBoston, MA
Periyot28/11/112/12/11

Finansman

This work was supported by Turkish Scientific and Research Council (TUBITAK) under BIDEB-2219 program.

FinansörlerFinansör numarası
TUBITAKBIDEB-2219
Turkish Scientific and Research Council

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