Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

N. H. Erdogan, K. Kara, H. Ozdamar, H. Kavak*, R. Esen, H. Karaagac

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16 Atıf (Scopus)

Özet

In this study, N-doped ZnO thin films were fabricated by oxidation of ZnxNy films. The ZnxNy thin films were deposited on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) using metallic zinc wire (99.999%) as a cathode target in pure nitrogen plasma. The influence of oxidation temperature, on the electrical, structural and optical properties of N-doped ZnO films was investigated. P-type conduction was achieved for the N-doped ZnO obtained at 450 °C by oxidation of ZnxNy, with a resistivity of 16.1 Ω cm, hole concentration of 2.03 × 1016 cm-3 and Hall mobility of 19 cm2/V s. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N into the ZnO films. X-ray diffraction (XRD) pattern showed that the films as-deposited and oxidized at 350 °C were amorphous. However, the oxidized films in air atmosphere at 450-550 °C were polycrystalline without preferential orientation. In room temperature photoluminescence (PL) spectra, an ultraviolet (UV) peak was seen for all the samples. In addition, a broad deep level emission was observed.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)8922-8926
Sayfa sayısı5
DergiJournal of Alloys and Compounds
Hacim509
Basın numarası36
DOI'lar
Yayın durumuYayınlandı - 8 Eyl 2011
Harici olarak yayınlandıEvet

Finansman

This work is supported by the Research Found of Cukurova University and the Scientific and Technological Research Council of Turkey (Grant No.: 106T613 ).

FinansörlerFinansör numarası
Cukurova University
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu106T613

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