Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

D. Demiroʇlu, B. Tatar, K. Kazmanli, M. Urgen

Araştırma sonucu: ???type-name???Konferans katkısıbilirkişi

Özet

In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height Φ B0 =0.83-1.00eV; diode ideality factor η=11.71-10.73; series resistance R s =260-31.1 kΩ and shunt resistance R sh =25.71-63.5 MΩ SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10 3 - 10 4 times. The obtained photovoltaic parameters are such as short circuit current density J sc 83-40 mA/m 2 , open circuit voltage V oc 900-831 mV.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığı3rd International Advances in Applied Physics and Materials Science Congress
EditörlerAsli Sonmez, Zehra Banu Bahsi, Ahmet Yavuz Oral
YayınlayanAmerican Institute of Physics Inc.
Sayfalar154-157
Sayfa sayısı4
ISBN (Elektronik)9780735411975
DOI'lar
Yayın durumuYayınlandı - 2013
Etkinlik3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 - Antalya, Turkey
Süre: 24 Nis 201328 Nis 2013

Yayın serisi

AdıAIP Conference Proceedings
Hacim1569
ISSN (Basılı)0094-243X
ISSN (Elektronik)1551-7616

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???event.eventtypes.event.conference???3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013
Ülke/BölgeTurkey
ŞehirAntalya
Periyot24/04/1328/04/13

Bibliyografik not

Publisher Copyright:
© 2013 AIP Publishing LLC.

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