Stress-induced changes in phonon frequencies of ZrSiO4: Infrared spectroscopy-based pressure sensor

Mubashir Mansoor, Mehya Mansoor, Maryam Mansoor, Zuhal Er, Kamil Czelej*, Mustafa Ürgen*

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5 Atıf (Scopus)

Özet

Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate has been suggested as a Raman spectroscopic pressure sensor. However, mass applications of a Raman-based sensor technology poses a wide range of challenges. We demonstrate that ZrSiO4 also exhibits pressure-dependent infrared (IR) spectra. Furthermore, the IR peaks of ZrSiO4 are sensitive to shear stresses and non-hydrostatic pressures, making this material a unique sensor for determining a variety of mechanical stresses through IR spectroscopy.

Orijinal dilİngilizce
Makale numarası114983
DergiSolid State Communications
Hacim357
DOI'lar
Yayın durumuYayınlandı - 1 Ara 2022

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© 2022 Elsevier Ltd

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