Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu; Nergiz Sahin Solmaz; Sadik Ilik; Yasemin Uzun; Mustafa Berke Yelten

doi:10.1109/TED.2018.2877942

Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu^*, Nergiz Sahin Solmaz, Sadik Ilik, Yasemin Uzun, Mustafa Berke Yelten

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

23 Atıf (Scopus)

Özet

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I_D-V_GS and I_D-V_DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

Orijinal dil	İngilizce
Makale numarası	8550668
Sayfa (başlangıç-bitiş)	66-72
Sayfa sayısı	7
Dergi	IEEE Transactions on Electron Devices
Hacim	66
Basın numarası	1
DOI'lar	https://doi.org/10.1109/TED.2018.2877942
Yayın durumu	Yayınlandı - Oca 2019

Bibliyografik not

Publisher Copyright:
© 1963-2012 IEEE.

Finansman

Manuscript received July 30, 2018; revised October 6, 2018; accepted October 17, 2018. Date of publication November 28, 2018; date of current version December 24, 2018. This work was supported by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080. The review of this paper was arranged by Editor S. Yoshitomi. (Corresponding author: Aykut Kabaog˘lu.) The authors are with the VLSI Laboratory, Department of Electronics and Communication Engineering, Istanbul Technical University, 34469 Istanbul, Turkey (e-mail: [email protected]; sahinn@ itu.edu.tr; [email protected]; [email protected]; [email protected]).

Finansörler	Finansör numarası
Technological Research Council of Turkey	1001 215E080

Belgeye Erişim

10.1109/TED.2018.2877942

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "Statistical MOSFET Modeling Methodology for Cryogenic Conditions",

abstract = "Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.",

keywords = "BSIM modeling, MOSFET modeling, cryogenic, cryogenic variation, device modeling, low temperature, statistical modeling",

author = "Aykut Kabaoglu and Solmaz, {Nergiz Sahin} and Sadik Ilik and Yasemin Uzun and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = jan,

doi = "10.1109/TED.2018.2877942",

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AU - Kabaoglu, Aykut

AU - Solmaz, Nergiz Sahin

AU - Ilik, Sadik

AU - Uzun, Yasemin

AU - Yelten, Mustafa Berke

PY - 2019/1

Y1 - 2019/1

N2 - Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

AB - Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

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Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Özet

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

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