Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu*, Nergiz Sahin Solmaz, Sadik Ilik, Yasemin Uzun, Mustafa Berke Yelten

*Bu çalışma için yazışmadan sorumlu yazar

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20 Atıf (Scopus)


Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

Orijinal dilİngilizce
Makale numarası8550668
Sayfa (başlangıç-bitiş)66-72
Sayfa sayısı7
DergiIEEE Transactions on Electron Devices
Basın numarası1
Yayın durumuYayınlandı - Oca 2019

Bibliyografik not

Publisher Copyright:
© 1963-2012 IEEE.


Manuscript received July 30, 2018; revised October 6, 2018; accepted October 17, 2018. Date of publication November 28, 2018; date of current version December 24, 2018. This work was supported by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080. The review of this paper was arranged by Editor S. Yoshitomi. (Corresponding author: Aykut Kabaog˘lu.) The authors are with the VLSI Laboratory, Department of Electronics and Communication Engineering, Istanbul Technical University, 34469 Istanbul, Turkey (e-mail: [email protected]; sahinn@; [email protected]; [email protected]; [email protected]).

FinansörlerFinansör numarası
Technological Research Council of Turkey1001 215E080

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