Simplified method to analyze drive strengths for gan power devices

Enis Baris Bulut; Mehmet Onur Gulbahce; Derya Ahmet Kocabas; Serkan Dusmez

Simplified method to analyze drive strengths for gan power devices

Enis Baris Bulut
, Mehmet Onur Gulbahce
, Derya Ahmet Kocabas
, Serkan Dusmez^*

^*Bu çalışma için yazışmadan sorumlu yazar

Elektrik Mühendisliği Bölümü

Trakya University
Istanbul Technical University
Fatih Sultan Mehmet Vakif Universitesi
Arçelik A.S.

Araştırma çıktısı: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › Hakem

3 Atıf (Scopus)

Özet

GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Yayınlayan	Mesago PCIM GmbH
Sayfalar	145-152
Sayfa sayısı	8
ISBN (Elektronik)	9783800755158
Yayın durumu	Yayınlandı - 2021
Etkinlik	2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 - Virtual, Online Süre: 3 May 2021 → 7 May 2021

Yayın serisi

Adı	PCIM Europe Conference Proceedings
Hacim	2021-May
ISSN (Elektronik)	2191-3358

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021
Şehir	Virtual, Online
Periyot	3/05/21 → 7/05/21

Bibliyografik not

Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach.

Finansman

This paper has been produced benefiting from the 2232 International Fellowship for Outstanding Researchers Program of TÜBİTAK (Project No: 118C374). However, the entire responsibility of the paper belongs to the owner of the paper. The financial support received from TÜBİTAK does not mean that the content of the publication is approved in a scientific sense by TÜBİTAK.

Finansörler	Finansör numarası
TÜBİTAK	118C374

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@inproceedings{72cec10942cb48a3a425c5d162b30930,

title = "Simplified method to analyze drive strengths for gan power devices",

abstract = "GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.",

author = "Bulut, \{Enis Baris\} and Gulbahce, \{Mehmet Onur\} and Kocabas, \{Derya Ahmet\} and Serkan Dusmez",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH · Berlin · Offenbach.; 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 ; Conference date: 03-05-2021 Through 07-05-2021",

year = "2021",

language = "English",

series = "PCIM Europe Conference Proceedings",

publisher = "Mesago PCIM GmbH",

pages = "145--152",

booktitle = "PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management",

}

Bulut, EB, Gulbahce, MO , Kocabas, DA & Dusmez, S 2021, Simplified method to analyze drive strengths for gan power devices. in PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, hac. 2021-May, Mesago PCIM GmbH, pp. 145-152, 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021, Virtual, Online, 3/05/21.

Simplified method to analyze drive strengths for gan power devices. / Bulut, Enis Baris; Gulbahce, Mehmet Onur ; Kocabas, Derya Ahmet et al.
PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH, 2021. p. 145-152 (PCIM Europe Conference Proceedings; Hac. 2021-May).

Araştırma çıktısı: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › Hakem

TY - GEN

T1 - Simplified method to analyze drive strengths for gan power devices

AU - Bulut, Enis Baris

AU - Gulbahce, Mehmet Onur

AU - Kocabas, Derya Ahmet

AU - Dusmez, Serkan

PY - 2021

Y1 - 2021

N2 - GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.

AB - GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.

UR - https://www.scopus.com/pages/publications/85117709669

M3 - Conference contribution

AN - SCOPUS:85117709669

T3 - PCIM Europe Conference Proceedings

SP - 145

EP - 152

BT - PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

PB - Mesago PCIM GmbH

T2 - 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021

Y2 - 3 May 2021 through 7 May 2021

ER -

Simplified method to analyze drive strengths for gan power devices

Özet

Yayın serisi

???event.eventtypes.event.conference???

Bibliyografik not

Finansman

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap