Özet
GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.
Orijinal dil | İngilizce |
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Ana bilgisayar yayını başlığı | PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
Yayınlayan | Mesago PCIM GmbH |
Sayfalar | 145-152 |
Sayfa sayısı | 8 |
ISBN (Elektronik) | 9783800755158 |
Yayın durumu | Yayınlandı - 2021 |
Etkinlik | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 - Virtual, Online Süre: 3 May 2021 → 7 May 2021 |
Yayın serisi
Adı | PCIM Europe Conference Proceedings |
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Hacim | 2021-May |
ISSN (Elektronik) | 2191-3358 |
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???event.eventtypes.event.conference??? | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 |
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Şehir | Virtual, Online |
Periyot | 3/05/21 → 7/05/21 |
Bibliyografik not
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