Simplified method to analyze drive strengths for gan power devices

Enis Baris Bulut, Mehmet Onur Gulbahce, Derya Ahmet Kocabas, Serkan Dusmez*

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde BölümKonferans katkısıbilirkişi

3 Atıf (Scopus)

Özet

GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıPCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
YayınlayanMesago PCIM GmbH
Sayfalar145-152
Sayfa sayısı8
ISBN (Elektronik)9783800755158
Yayın durumuYayınlandı - 2021
Etkinlik2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 - Virtual, Online
Süre: 3 May 20217 May 2021

Yayın serisi

AdıPCIM Europe Conference Proceedings
Hacim2021-May
ISSN (Elektronik)2191-3358

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???event.eventtypes.event.conference???2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021
ŞehirVirtual, Online
Periyot3/05/217/05/21

Bibliyografik not

Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach.

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