Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs

Mesut Atasoyu*, Mustafa Altun, Serdar Ozoguz

*Bu çalışma için yazışmadan sorumlu yazar

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4 Atıf (Scopus)


In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in average reading speed compared with the previous works due to its device structure and the proposed circuit technique.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)30-36
Sayfa sayısı7
DergiMicroelectronics Journal
Yayın durumuYayınlandı - Tem 2019

Bibliyografik not

Publisher Copyright:
© 2019 Elsevier Ltd


This work is part of a project that has received funding from the European Union’s H2020 research and innovation programme under the Marie Skodowska-Curie grant agreement No 691178 , and by the TUBITAK-BIDEB 2214/A. The authors would like to thank Prof. Kaushik Roy and his grateful discussions.

FinansörlerFinansör numarası
European Union’s H2020 research and innovation programme
Marie Skodowska-Curie
Horizon 2020 Framework Programme691178

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