Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3

Yuhang Ren; Piyali Maity; David Ascienzo; Onur Kurt; H. Cheng; Jun Ouyang

doi:10.1002/aelm.202300497

Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr_0.2Ti_0.8O₃

Yuhang Ren^*, Piyali Maity, David Ascienzo, Onur Kurt, H. Cheng, Jun Ouyang

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Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

5 Atıf (Scopus)

Özet

Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr_0.2Ti_0.8O₃ (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

Orijinal dil	İngilizce
Makale numarası	2300497
Dergi	Advanced Electronic Materials
Hacim	9
Basın numarası	11
DOI'lar	https://doi.org/10.1002/aelm.202300497
Yayın durumu	Yayınlandı - Kas 2023
Harici olarak yayınlandı	Evet

Bibliyografik not

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Finansman

The work at Hunter College was supported by the Air Force Office of Scientific Research (Grant No. FA9550-20-1-0388) and PSC-CUNY (Grant No. 63728-00 51). J. Ouyang acknowledges the partial financial support from the National Natural Science Foundation of China (Project Grant nos. 51772175), and the Jinan City Science and Technology Bureau (Grant No. 2021GXRC055). H. Cheng acknowledges the partial support from the Jiangsu Province NSFC (Grant No. BK20180764). The work at Hunter College was supported by the Air Force Office of Scientific Research (Grant No. FA9550‐20‐1‐0388) and PSC‐CUNY (Grant No. 63728‐00 51). J. Ouyang acknowledges the partial financial support from the National Natural Science Foundation of China (Project Grant nos. 51772175), and the Jinan City Science and Technology Bureau (Grant No. 2021GXRC055). H. Cheng acknowledges the partial support from the Jiangsu Province NSFC (Grant No. BK20180764).

Finansörler	Finansör numarası
Jiangsu Province NSFC	BK20180764
PSC‐CUNY	63728‐00 51
Air Force Office of Scientific Research	FA9550‐20‐1‐0388
Jinan Science and Technology Bureau	2021GXRC055
Professional Staff Congress and City University of New York
National Natural Science Foundation of China	51772175

Belgeye Erişim

10.1002/aelm.202300497

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@article{d4409d4a3b244d4ab06d203cadcdf4da,

title = "Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3",

abstract = "Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.",

keywords = "ferroelectric thin films, high-energy-storage density, polymorphic domain structures, second harmonic generation, strain engineering",

author = "Yuhang Ren and Piyali Maity and David Ascienzo and Onur Kurt and H. Cheng and Jun Ouyang",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2023",

month = nov,

doi = "10.1002/aelm.202300497",

language = "English",

volume = "9",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3

AU - Ren, Yuhang

AU - Maity, Piyali

AU - Ascienzo, David

AU - Kurt, Onur

AU - Cheng, H.

AU - Ouyang, Jun

PY - 2023/11

Y1 - 2023/11

N2 - Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

AB - Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

KW - ferroelectric thin films

KW - high-energy-storage density

KW - polymorphic domain structures

KW - second harmonic generation

KW - strain engineering

UR - http://www.scopus.com/inward/record.url?scp=85170200705&partnerID=8YFLogxK

U2 - 10.1002/aelm.202300497

DO - 10.1002/aelm.202300497

M3 - Article

AN - SCOPUS:85170200705

SN - 2199-160X

VL - 9

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 11

M1 - 2300497

ER -