Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

Sadık İlik; Fikret Başar Gencer; Nergiz Şahin Solmaz; Alican Çağlar; Mustafa Berke Yelten

doi:10.1016/j.nimb.2019.04.040

Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

Sadık İlik, Fikret Başar Gencer, Nergiz Şahin Solmaz, Alican Çağlar, Mustafa Berke Yelten^*

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

3 Atıf (Scopus)

Özet

In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	1-5
Sayfa sayısı	5
Dergi	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Hacim	449
DOI'lar	https://doi.org/10.1016/j.nimb.2019.04.040
Yayın durumu	Yayınlandı - 15 Haz 2019

Bibliyografik not

Publisher Copyright:
© 2019 Elsevier B.V.

Finansman

This work was sponsored by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080 and Istanbul Technical University Department of Scientific Research Projects under the project contract number 40609. The authors would like to thank Prof. Sevilay Hacıyakupoğlu for valuable technical discussions, as well as, to the Turkish Atomic Energy Authority, particularly Mr. Zati Ünal, for his kind technical help during the preparation of the experimental setup.

Finansörler	Finansör numarası
Istanbul Technical University Department of Scientific Research Projects	40609
Technological Research Council of Turkey	1001 215E080

Belgeye Erişim

10.1016/j.nimb.2019.04.040

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "Radiation tolerance impact of trap density near the drain and source regions of a MOSFET",

abstract = "In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.",

keywords = "MOSFETs, Radiation damage, STI, TID, Trap density",

author = "Sadık İlik and Gencer, {Fikret Ba{\c s}ar} and Solmaz, {Nergiz {\c S}ahin} and Alican {\c C}ağlar and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jun,

day = "15",

doi = "10.1016/j.nimb.2019.04.040",

language = "English",

volume = "449",

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T1 - Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

AU - İlik, Sadık

AU - Gencer, Fikret Başar

AU - Solmaz, Nergiz Şahin

AU - Çağlar, Alican

AU - Yelten, Mustafa Berke

PY - 2019/6/15

Y1 - 2019/6/15

N2 - In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.

AB - In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.

KW - MOSFETs

KW - Radiation damage

KW - STI

KW - TID

KW - Trap density

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U2 - 10.1016/j.nimb.2019.04.040

DO - 10.1016/j.nimb.2019.04.040

M3 - Article

AN - SCOPUS:85064455793

SN - 0168-583X

VL - 449

SP - 1

EP - 5

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

Özet

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

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