Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

Sadık İlik, Fikret Başar Gencer, Nergiz Şahin Solmaz, Alican Çağlar, Mustafa Berke Yelten*

*Bu çalışma için yazışmadan sorumlu yazar

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3 Atıf (Scopus)

Özet

In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)1-5
Sayfa sayısı5
DergiNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Hacim449
DOI'lar
Yayın durumuYayınlandı - 15 Haz 2019

Bibliyografik not

Publisher Copyright:
© 2019 Elsevier B.V.

Finansman

This work was sponsored by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080 and Istanbul Technical University Department of Scientific Research Projects under the project contract number 40609. The authors would like to thank Prof. Sevilay Hacıyakupoğlu for valuable technical discussions, as well as, to the Turkish Atomic Energy Authority, particularly Mr. Zati Ünal, for his kind technical help during the preparation of the experimental setup.

FinansörlerFinansör numarası
Istanbul Technical University Department of Scientific Research Projects40609
Technological Research Council of Turkey1001 215E080

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