Performance Analysis of Power Devices for Bridgeless Totem-Pole PFC at Different Switching Frequencies

Bridgeless Totem-Pole power factor correction (BTPPFC) topology is very attractive compared to other power factor correction (PFC) topologies due to its simplicity and minimal components. However, BTPPFC could not gained enough popularity with traditional Silicon MOSFET (Si-MOSFET) due to efficiency issues. BTPPFC has hard-switching structure, so it introduces high turn-on loss. Especially reverse recovery loss reduces efficiency considerably. However, with the development of new generation switches such as silicon carbide MOSFET (SiC-MOSFET), Gallium Nitride (GaN) enhancement mode high electron mobility transistors (E-HEMT), Cascode GaN HEMT, BTPPFC topology has become available with high efficiency. This paper presents a performance analysis of Si-MOSFET, SiC-MOSFET, GaN E-HEMT and Cascode GaN HEMT in terms of efficiency for BTPPFC topology at different switching frequencies.