Özet
Cadmium zinc sulfide (Cd1-xZnxS) as a wide-bandgap material with x=0.7 was used in the present work as an alternative buffer material to CdS to improve the efficiency o fZnO/Cd1-xZnxS/CdTe, ZnO/Cd1-xZnxS/CZTS and ZnO/Cd1-xZnxS/CZTSe thin film solar cells. The photovoltaic parameters such as efficiency, open circuit voltage (Voc), short circuit current density (Jsc), and the Fill Factor (FF) have been computed using one-dimensional simulation programs such as Solar Cell Capacitance Simulator (SCAPS v3.3) and Analysis of Microelectronic and Photonic Structures (AMPS-1D). An improvement in conversion efficiency is noticed compared to the structure with the CdS buffer layer. It is found that the efficiencies of Cd1-xZnxS/CZTSe and Cd1-xZnxS/CdTeareincreased from 12.61% to 15.35% and from 17.53% to 18.83%, respectively. The simulations were performed for 1 µmthick absorber layers. It is also found that efficiency rises from 12.53% to 13.23% with Cd1-xZnxS/CZTS structure for CZTS thickness of 2.5 µm. Moreover, the Quantum Efficiency (QE) characteristics display a maximum value of more than 80% in the visible range and the structures presented a slight improvement in the short wavelength. The present study shows that the suggested structures with aCd1-xZnxS buffer layer may improve efficiency and reduce the amount of Cd, which is a toxic element.
Orijinal dil | İngilizce |
---|---|
Sayfa (başlangıç-bitiş) | 1360-1369 |
Sayfa sayısı | 10 |
Dergi | Iranian Journal of Chemistry and Chemical Engineering |
Hacim | 41 |
Basın numarası | 4 |
DOI'lar | |
Yayın durumu | Yayınlandı - Nis 2022 |
Bibliyografik not
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