Nanowire enabled photodetection

Matthew M. Ombaba*, Hakan Karaagac, Kazim G. Polat, M. Saif Islam

*Bu çalışma için yazışmadan sorumlu yazar

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3 Atıf (Scopus)


The physics and technology of nanowire (NW) photodetectors offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics and emerging negative index metamaterials based devices. The successful integration of NW photodetectors on CMOS compatible substrates and various low cost substrates would enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this chapter, we review the advantages of NW-based photodetectors, current device fabrication and integration schemes, practical strategies, recent device demonstrations and discuss the numerous technical design challenges. We present discussions on (i) low resistance contact and interfaces for NW integration, (ii) high speed design and impedance matching, and (iii) CMOS compatible mass-manufacturable device fabrication. We also offer a brief outlook into the future perspectives on material growth and the future communication, consumer and defense application opportunities for NW photodetectors.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıPhotodetectors
Ana bilgisayar yayını alt yazısıMaterials, Devices and Applications
YayınlayanElsevier Inc.
Sayfa sayısı34
ISBN (Elektronik)9781782424680
ISBN (Basılı)9781782424451
Yayın durumuYayınlandı - 2016

Bibliyografik not

Publisher Copyright:
© 2016 Elsevier Ltd All rights reserved.


The authors are truly grateful for financial support from the DoD (ARO Research Grant # W911NF-14-4-0341) and National Science Foundation (Grant CMMI-1235592).

FinansörlerFinansör numarası
National Science FoundationCMMI-1235592
U.S. Department of Defense
Army Research OfficeW911NF-14-4-0341

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