Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics

Kee Cho; Daniel J. Ruebusch; Min Hyung Lee; Jae Hyun Moon; Alexandra C. Ford; Rehan Kapadia; Kuniharu Takei; Onur Ergen; Ali Javey

doi:10.1063/1.3585138

Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics

Kee Cho^*
, Daniel J. Ruebusch
, Min Hyung Lee
, Jae Hyun Moon
, Alexandra C. Ford
, Rehan Kapadia
, Kuniharu Takei
, Onur Ergen
, Ali Javey

^*Bu çalışma için yazışmadan sorumlu yazar

University of California at Berkeley
Lawrence Berkeley National Laboratory

Araştırma çıktısı: Dergi yayını › Makale › Hakemli

56 Atıf (Scopus)

Özet

Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 10¹⁹ - 10²⁰ cm^-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1% and a short circuit current density of 25 mA/ cm³. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.

Orijinal dil	İngilizce
Makale numarası	203101
Dergi	Applied Physics Letters
Hacim	98
Basın numarası	20
DOI'lar	https://doi.org/10.1063/1.3585138
Yayın durumu	Yayınlandı - 16 May 2011
Harici olarak yayınlandı	Evet

Finansman

This work was supported by Mohr Davidow Ventures and NSF (Grant No. 0826145). The S-MLD process development was supported by a LDRD from LBNL. A.J. acknowledges a Sloan research fellowship and support from the World Class University program at Sunchon National University. J.M. acknowledges financial support from Korea Institute for Advancement of Technology (KIAT). R.K. acknowledges an NSF Graduate Fellowship.

Finansörler	Finansör numarası
Mohr Davidow Ventures
National Science Foundation	0826145
Lawrence Berkeley National Laboratory
Laboratory Directed Research and Development
Sunchon National University
Korea Institute for Advancement of Technology

BM SKH

Bu sonuç, aşağıdaki Sürdürülebilir Kalkınma Hedefine/Hedeflerine katkıda bulunur

SKH 7 Erişilebilir ve Temiz Enerji

Belgeye Erişim

10.1063/1.3585138

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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abstract = "Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 1019 - 1020 cm-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1\% and a short circuit current density of 25 mA/ cm3. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.",

author = "Kee Cho and Ruebusch, \{Daniel J.\} and Lee, \{Min Hyung\} and Moon, \{Jae Hyun\} and Ford, \{Alexandra C.\} and Rehan Kapadia and Kuniharu Takei and Onur Ergen and Ali Javey",

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AU - Cho, Kee

AU - Ruebusch, Daniel J.

AU - Lee, Min Hyung

AU - Moon, Jae Hyun

AU - Ford, Alexandra C.

AU - Kapadia, Rehan

AU - Takei, Kuniharu

AU - Ergen, Onur

AU - Javey, Ali

PY - 2011/5/16

Y1 - 2011/5/16

N2 - Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 1019 - 1020 cm-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1% and a short circuit current density of 25 mA/ cm3. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.

AB - Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 1019 - 1020 cm-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1% and a short circuit current density of 25 mA/ cm3. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.

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U2 - 10.1063/1.3585138

DO - 10.1063/1.3585138

M3 - Article

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics

Özet

Finansman

BM SKH

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap