Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Sadik Ilik, Aykut Kabaoǧlu, Nergiz Şahin Solmaz, Mustafa Berke Yelten*

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This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%.

Orijinal dilİngilizce
Makale numarası8770267
Sayfa (başlangıç-bitiş)4617-4622
Sayfa sayısı6
DergiIEEE Transactions on Electron Devices
Basın numarası11
Yayın durumuYayınlandı - Kas 2019

Bibliyografik not

Publisher Copyright:
© 1963-2012 IEEE.


Manuscript received April 11, 2019; revised June 17, 2019; accepted July 1, 2019. Date of publication July 23, 2019; date of current version October 29, 2019. This work was supported by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080. The review of this paper was arranged by Editor J. H. Stathis. (Corresponding author: Mustafa Berke Yelten.) S. İlik, A. Kabaog˘lu, and M. B. Yelten are with the VLSI Laboratory, Department of Electronics and Communication Engineering, Istanbul Technical University, Istanbul 34469, Turkey (e-mail: [email protected]; [email protected]; [email protected]).

FinansörlerFinansör numarası
Technological Research Council of TurkeyTÜBİTAK 1001 215E080

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