Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Sadik Ilik; Aykut Kabaoǧlu; Nergiz Şahin Solmaz; Mustafa Berke Yelten

doi:10.1109/TED.2019.2926931

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Sadik Ilik, Aykut Kabaoǧlu, Nergiz Şahin Solmaz, Mustafa Berke Yelten^*

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

15 Atıf (Scopus)

Özet

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%.

Orijinal dil	İngilizce
Makale numarası	8770267
Sayfa (başlangıç-bitiş)	4617-4622
Sayfa sayısı	6
Dergi	IEEE Transactions on Electron Devices
Hacim	66
Basın numarası	11
DOI'lar	https://doi.org/10.1109/TED.2019.2926931
Yayın durumu	Yayınlandı - Kas 2019

Bibliyografik not

Publisher Copyright:
© 1963-2012 IEEE.

Finansman

Manuscript received April 11, 2019; revised June 17, 2019; accepted July 1, 2019. Date of publication July 23, 2019; date of current version October 29, 2019. This work was supported by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080. The review of this paper was arranged by Editor J. H. Stathis. (Corresponding author: Mustafa Berke Yelten.) S. İlik, A. Kabaog˘lu, and M. B. Yelten are with the VLSI Laboratory, Department of Electronics and Communication Engineering, Istanbul Technical University, Istanbul 34469, Turkey (e-mail: [email protected]; [email protected]; [email protected]).

Finansörler	Finansör numarası
Technological Research Council of Turkey	TÜBİTAK 1001 215E080

Belgeye Erişim

10.1109/TED.2019.2926931

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@article{7cc47cbe08ee4ecdb7944a9ac27a9440,

title = "Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3",

abstract = "This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%.",

keywords = "Analog circuits, radiation, total ionization dose, total ionizing dose (TID), transistor modeling",

author = "Sadik Ilik and Aykut Kabaoǧlu and Solmaz, {Nergiz {\c S}ahin} and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = nov,

doi = "10.1109/TED.2019.2926931",

language = "English",

volume = "66",

pages = "4617--4622",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

AU - Ilik, Sadik

AU - Kabaoǧlu, Aykut

AU - Solmaz, Nergiz Şahin

AU - Yelten, Mustafa Berke

PY - 2019/11

Y1 - 2019/11

N2 - This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%.

AB - This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%.

KW - Analog circuits

KW - radiation

KW - total ionization dose

KW - total ionizing dose (TID)

KW - transistor modeling

UR - http://www.scopus.com/inward/record.url?scp=85074452827&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2926931

DO - 10.1109/TED.2019.2926931

M3 - Article

AN - SCOPUS:85074452827

SN - 0018-9383

VL - 66

SP - 4617

EP - 4622

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8770267

ER -

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Özet

Bibliyografik not

Finansman

Belgeye Erişim

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