Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Onur Ergen; Ashley Gibb; Oscar Vazquez-Mena; William Raymond Regan; Alex Zettl

doi:10.1063/1.4914181

Metal insulator semiconductor solar cell devices based on a Cu₂O substrate utilizing h-BN as an insulating and passivating layer

Onur Ergen
, Ashley Gibb
, Oscar Vazquez-Mena
, William Raymond Regan
, Alex Zettl

University of California at Berkeley
Lawrence Berkeley National Laboratory

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

21 Atıf (Scopus)

Özet

We demonstrate cuprous oxide (Cu₂O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu₂O layer. The devices are the most efficient of any Cu₂O based MIS-Schottky solar cells reported to date.

Orijinal dil	İngilizce
Makale numarası	103904
Dergi	Applied Physics Letters
Hacim	106
Basın numarası	10
DOI'lar	https://doi.org/10.1063/1.4914181
Yayın durumu	Yayınlandı - 9 Mar 2015
Harici olarak yayınlandı	Evet

Bibliyografik not

Publisher Copyright:
© 2015 AIP Publishing LLC.

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Belgeye Erişim

10.1063/1.4914181

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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abstract = "We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3\%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.",

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AU - Gibb, Ashley

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AU - Regan, William Raymond

AU - Zettl, Alex

PY - 2015/3/9

Y1 - 2015/3/9

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AB - We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

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