Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

N. F. Zikrillaev, G. H. Mavlonov, L. Trabzon, S. B. Isamov, Y. A. Abduganiev, Sh N. Ibodullaev, G. A. Kushiev

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Özet

The electrical parameters of silicon samples diffusion doped by europium impurity atoms were studied by Van der Pauw (VDP) method. The experimental results were examined, particularly the surface morphology using an Atomic Force Microscope (AFM). The lattice constant of the materials was calculated with the help of Bragg-Brentano's law using X-ray diffraction on the XRD pattern of the Si<P,Eu> sample.

Orijinal dilİngilizce
Makale numarası06001
DergiJournal of Nano- and Electronic Physics
Hacim15
Basın numarası6
DOI'lar
Yayın durumuYayınlandı - 2023

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