Low voltage organic transistors with water-processed gum arabic dielectric

Mané Seck; Navid Mohammadian; Abdou K. Diallo; Sheida Faraji; Meriem Saadi; Mohsen Erouel; El Hadji Babacar Ly; Kamel Khirouni; Leszek A. Majewski

doi:10.1016/j.synthmet.2020.116447

Low voltage organic transistors with water-processed gum arabic dielectric

Mané Seck, Navid Mohammadian, Abdou K. Diallo^*, Sheida Faraji, Meriem Saadi, Mohsen Erouel, El Hadji Babacar Ly, Kamel Khirouni, Leszek A. Majewski

^*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: ???type-name??? › Makale › bilirkişi

16 Atıf (Scopus)

Özet

In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μ_sat = 0.6 cm²V^-1s^-1, threshold voltage V_th = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio I_ON/OFF > 10². The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10⁻⁷ A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

Orijinal dil	İngilizce
Makale numarası	116447
Dergi	Synthetic Metals
Hacim	267
DOI'lar	https://doi.org/10.1016/j.synthmet.2020.116447
Yayın durumu	Yayınlandı - Eyl 2020
Harici olarak yayınlandı	Evet

Bibliyografik not

Publisher Copyright:
© 2020 Elsevier B.V.

BM SKH

Bu sonuç, aşağıdaki Sürdürülebilir Kalkınma Hedefine/Hedeflerine katkıda bulunur

Belgeye Erişim

10.1016/j.synthmet.2020.116447

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@article{e1b0967045ab4b1c8711dde3a5e2dad6,

title = "Low voltage organic transistors with water-processed gum arabic dielectric",

abstract = "In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10−7 A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.",

keywords = "Biodegradable dielectric, Gum arabic (GA), Low voltage transistor operation, Organic thin film transistor (OTFT), Water-processed insulator",

author = "Man{\'e} Seck and Navid Mohammadian and Diallo, {Abdou K.} and Sheida Faraji and Meriem Saadi and Mohsen Erouel and Ly, {El Hadji Babacar} and Kamel Khirouni and Majewski, {Leszek A.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = sep,

doi = "10.1016/j.synthmet.2020.116447",

language = "English",

volume = "267",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Low voltage organic transistors with water-processed gum arabic dielectric

AU - Seck, Mané

AU - Mohammadian, Navid

AU - Diallo, Abdou K.

AU - Faraji, Sheida

AU - Saadi, Meriem

AU - Erouel, Mohsen

AU - Ly, El Hadji Babacar

AU - Khirouni, Kamel

AU - Majewski, Leszek A.

PY - 2020/9

Y1 - 2020/9

N2 - In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10−7 A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

AB - In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10−7 A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

KW - Biodegradable dielectric

KW - Gum arabic (GA)

KW - Low voltage transistor operation

KW - Organic thin film transistor (OTFT)

KW - Water-processed insulator

UR - http://www.scopus.com/inward/record.url?scp=85086386715&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2020.116447

DO - 10.1016/j.synthmet.2020.116447

M3 - Article

AN - SCOPUS:85086386715

SN - 0379-6779

VL - 267

JO - Synthetic Metals

JF - Synthetic Metals

M1 - 116447

ER -

Low voltage organic transistors with water-processed gum arabic dielectric

Özet

Bibliyografik not

BM SKH

Belgeye Erişim

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