Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

D. Demiroʇlu; B. Tatar; K. Kazmanli; M. Urgen

doi:10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

D. Demiroʇlu
, B. Tatar
, K. Kazmanli
, M. Urgen

Metalurji ve Malzeme Müh.Böl.

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

1 Atıf (Scopus)

Özet

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ _B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	3rd International Advances in Applied Physics and Materials Science Congress
Editörler	Asli Sonmez, Zehra Banu Bahsi, Ahmet Yavuz Oral
Yayınlayan	American Institute of Physics Inc.
Sayfalar	158-161
Sayfa sayısı	4
ISBN (Elektronik)	9780735411975
DOI'lar	https://doi.org/10.1063/1.4849249
Yayın durumu	Yayınlandı - 2013
Etkinlik	3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 - Antalya, Turkey Süre: 24 Nis 2013 → 28 Nis 2013

Yayın serisi

Adı	AIP Conference Proceedings
Hacim	1569
ISSN (Basılı)	0094-243X
ISSN (Elektronik)	1551-7616

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???event.eventtypes.event.conference???	3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013
Ülke/Bölge	Turkey
Şehir	Antalya
Periyot	24/04/13 → 28/04/13

Bibliyografik not

Publisher Copyright:
© 2013 AIP Publishing LLC.

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Belgeye Erişim

10.1063/1.4849249

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

Demiroʇlu, D., Tatar, B., Kazmanli, K., & Urgen, M. (2013). Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. In A. Sonmez, Z. B. Bahsi, & A. Y. Oral (Eds.), 3rd International Advances in Applied Physics and Materials Science Congress (pp. 158-161). (AIP Conference Proceedings; Hac. 1569). American Institute of Physics Inc.. https://doi.org/10.1063/1.4849249

Demiroʇlu, D. ; Tatar, B. ; Kazmanli, K. et al. / Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. 3rd International Advances in Applied Physics and Materials Science Congress. editör / Asli Sonmez ; Zehra Banu Bahsi ; Ahmet Yavuz Oral. American Institute of Physics Inc., 2013. pp. 158-161 (AIP Conference Proceedings).

@inproceedings{7bfb8ce44085459abe868609156155f2,

title = "Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique",

abstract = " Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.",

keywords = "Amorphous silicon, e-beam evaporation technique, electrical properties",

author = "D. Demiroʇlu and B. Tatar and K. Kazmanli and M. Urgen",

note = "Publisher Copyright: {\textcopyright} 2013 AIP Publishing LLC.; 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 ; Conference date: 24-04-2013 Through 28-04-2013",

year = "2013",

doi = "10.1063/1.4849249",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

pages = "158--161",

editor = "Asli Sonmez and Bahsi, \{Zehra Banu\} and Oral, \{Ahmet Yavuz\}",

booktitle = "3rd International Advances in Applied Physics and Materials Science Congress",

}

Demiroʇlu, D, Tatar, B, Kazmanli, K & Urgen, M 2013, Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. in A Sonmez, ZB Bahsi & AY Oral (eds), 3rd International Advances in Applied Physics and Materials Science Congress. AIP Conference Proceedings, hac. 1569, American Institute of Physics Inc., pp. 158-161, 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013, Antalya, Turkey, 24/04/13. https://doi.org/10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. / Demiroʇlu, D.; Tatar, B.; Kazmanli, K. et al.
3rd International Advances in Applied Physics and Materials Science Congress. ed. / Asli Sonmez; Zehra Banu Bahsi; Ahmet Yavuz Oral. American Institute of Physics Inc., 2013. p. 158-161 (AIP Conference Proceedings; Hac. 1569).

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

TY - GEN

T1 - Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

AU - Demiroʇlu, D.

AU - Tatar, B.

AU - Kazmanli, K.

AU - Urgen, M.

PY - 2013

Y1 - 2013

N2 - Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

AB - Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

KW - Amorphous silicon

KW - e-beam evaporation technique

KW - electrical properties

UR - https://www.scopus.com/pages/publications/84942855737

U2 - 10.1063/1.4849249

DO - 10.1063/1.4849249

M3 - Conference contribution

AN - SCOPUS:84942855737

T3 - AIP Conference Proceedings

SP - 158

EP - 161

BT - 3rd International Advances in Applied Physics and Materials Science Congress

A2 - Sonmez, Asli

A2 - Bahsi, Zehra Banu

A2 - Oral, Ahmet Yavuz

PB - American Institute of Physics Inc.

T2 - 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013

Y2 - 24 April 2013 through 28 April 2013

ER -

Demiroʇlu D, Tatar B, Kazmanli K, Urgen M. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. In Sonmez A, Bahsi ZB, Oral AY, editörler, 3rd International Advances in Applied Physics and Materials Science Congress. American Institute of Physics Inc. 2013. p. 158-161. (AIP Conference Proceedings). doi: 10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

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BM SKH

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