Investigation of physical properties of quaternary AgGa o.5Ino.5Te2 thin films deposited by thermal evaporation

H. Karaagac, M. Parlak*

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12 Atıf (Scopus)

Özet

The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-existence of AgGaTe2 and AgGa0.5In 0.5Te2 phases. However, the single phase of AgGa 0.5In0.5Te2 chalcopyrite structure was obtained at the annealing of 300 °C. The band gap values were calculated in between 1.05 and 1.37 eV depending on annealing temperature. The temperature dependent photoconductivity was measured under different illumination intensity. The nature of existing trap levels were studied by measuring the variation of photocurrent as a function of illumination intensity. The analysis showed that AgGa0.5In0.5Te2 thin film changes its behavior from the sublinear to supralinear photoconductivity after annealing.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)468-473
Sayfa sayısı6
DergiJournal of Alloys and Compounds
Hacim503
Basın numarası2
DOI'lar
Yayın durumuYayınlandı - 23 Tem 2010
Harici olarak yayınlandıEvet

Finansman

This work was supported by Turkish Scientific and Research Council (TUBITAK) under Grant No. 108T019 .

FinansörlerFinansör numarası
TUBITAK108T019
Turkish Scientific and Research Council

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