Influence of structural changes on electrical properties of Al:ZnO films

Osman Urper; Nilgun Baydogan

doi:10.1016/j.matlet.2019.126641

Influence of structural changes on electrical properties of Al:ZnO films

Osman Urper
, Nilgun Baydogan^*

^*Bu çalışma için yazışmadan sorumlu yazar

Enerji Enstitüsü

Istanbul Technical University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

18 Atıf (Scopus)

Özet

This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10⁻⁴ Ω.cm to 0.73–0.93 × 10⁻⁴ Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration.

Orijinal dil	İngilizce
Makale numarası	126641
Dergi	Materials Letters
Hacim	258
DOI'lar	https://doi.org/10.1016/j.matlet.2019.126641
Yayın durumu	Yayınlandı - 1 Oca 2020

Bibliyografik not

Publisher Copyright:
© 2019 Elsevier B.V.

Finansman

Authors thank to Prof. Dr. Huseyin CIMENOGLU for his support about fabrication process at laboratory in Materials Engineering, ITU, Turkey. This work was financially supported by ITU Scientific Research Projects Foundation, BAP, Turkey, Project No: 41978 for Ph.D. Thesis. Authors thank to Prof. Dr. Huseyin CIMENOGLU for his support about fabrication process at laboratory in Materials Engineering, ITU, Turkey . This work was financially supported by ITU Scientific Research Projects Foundation, BAP, Turkey, Project No: 41978 for Ph.D. Thesis.

Finansörler	Finansör numarası
ITU Scientific Research Projects Foundation	41978
British Association for Psychopharmacology

Belgeye Erişim

10.1016/j.matlet.2019.126641

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@article{bb8fe25f49514fb698cad29b9ab63928,

title = "Influence of structural changes on electrical properties of Al:ZnO films",

abstract = "This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10−4 Ω.cm to 0.73–0.93 × 10−4 Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. \%, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85\% and 90\% by increasing Al concentration.",

keywords = "Optoelectronic, Sol-gel, Structural characterization, Thin films",

author = "Osman Urper and Nilgun Baydogan",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = jan,

day = "1",

doi = "10.1016/j.matlet.2019.126641",

language = "English",

volume = "258",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Influence of structural changes on electrical properties of Al:ZnO films

AU - Urper, Osman

AU - Baydogan, Nilgun

PY - 2020/1/1

Y1 - 2020/1/1

N2 - This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10−4 Ω.cm to 0.73–0.93 × 10−4 Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration.

AB - This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10−4 Ω.cm to 0.73–0.93 × 10−4 Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration.

KW - Optoelectronic

KW - Sol-gel

KW - Structural characterization

KW - Thin films

UR - https://www.scopus.com/pages/publications/85073122984

U2 - 10.1016/j.matlet.2019.126641

DO - 10.1016/j.matlet.2019.126641

M3 - Article

AN - SCOPUS:85073122984

SN - 0167-577X

VL - 258

JO - Materials Letters

JF - Materials Letters

M1 - 126641

ER -

Influence of structural changes on electrical properties of Al:ZnO films

Özet

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap