Özet
The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.
Orijinal dil | İngilizce |
---|---|
Sayfa (başlangıç-bitiş) | 247-252 |
Sayfa sayısı | 6 |
Dergi | Surface Science |
Hacim | 452 |
Basın numarası | 1-3 |
DOI'lar | |
Yayın durumu | Yayınlandı - 1 May 2000 |
Harici olarak yayınlandı | Evet |