Holistic Device Modeling: Toward a Unified MOSFET Model Including Variability, Aging, and Extreme Operating Conditions

Mustafa Berke Yelten*

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6 Atıf (Scopus)

Özet

This tutorial presents the holistic modeling concept in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling approaches will be comparatively discussed. Subsequently, several factors impacting the operation of MOSFETs will be explained in terms of their physical origins and their modeling, as already undertaken in the literature. These factors include process variations, time-based degradation, as well as extreme environmental conditions, such as low or high temperatures and ionizing radiation. Subsequently, the need for considering these phenomena in joint configurations is demonstrated through experimental data. Finally, an implementation strategy for holistic modeling will be proposed by introducing 'extreme corners', which represent the combinations of conventional process corners with the mentioned factors at various values of interest.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)2635-2640
Sayfa sayısı6
DergiIEEE Transactions on Circuits and Systems II: Express Briefs
Hacim69
Basın numarası6
DOI'lar
Yayın durumuYayınlandı - 1 Haz 2022

Bibliyografik not

Publisher Copyright:
© 2004-2012 IEEE.

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