High Performance Wideband 0.25 μ m GaAs Bi-Directional Low Noise Amplifier Design

This paper introduces a bi-directional low noise amplifier (Bi-LNA) suitable for a wide frequency range from 100 MHz to 3 GHz in a 0.25 μ m GaAs pHEMT technology. The design relies on single-pole-double-through (SPDT) switches with high isolation and low insertion loss, enabling switching between forward and backward configurations while maintaining high linearity and exceptional noise figure performance. The complete Bi-LNA architecture achieves an average gain of 20 dB, a noise figure of less than 1.85 dB, and input PldB performance better than -1 dBm. The robust performance of Bi-LNA is verified through Keysight Advanced Design System (ADS) post-layout simulations, resulting in an adaptive solution for communication systems and transceiver designs.