Özet
In this paper, Gallium Nitride (GaN) power amplifier (PA) design with 6W (37.78 dBm) output power operating in the 2-6 GHz frequency band is presented for use in wireless communications. This PA is designed to be implemented on the Rogers RT5870 dielectric substrate. Cree CGHV1F006S model transistor is used as GaN transistor. The performance of the designed PA is evaluated by making small and large signal simulations. The PA offers a small signal gain of 9.6 dB over the frequency band of 2-6 GHz. The simulation results show that when 28 dBm of power is applied to the input of the PA, the PA provides 37.6 dBm of output power and offers a power-added efficiency (PAE) of 44% to 50% over the band.
| Tercüme edilen katkı başlığı | A 2-6 GHz High Efficiency Power Amplifier Design for Communication Systems |
|---|---|
| Orijinal dil | Türkçe |
| Ana bilgisayar yayını başlığı | 31st IEEE Conference on Signal Processing and Communications Applications, SIU 2023 |
| Yayınlayan | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Elektronik) | 9798350343557 |
| DOI'lar | |
| Yayın durumu | Yayınlandı - 2023 |
| Etkinlik | 31st IEEE Conference on Signal Processing and Communications Applications, SIU 2023 - Istanbul, Turkey Süre: 5 Tem 2023 → 8 Tem 2023 |
Yayın serisi
| Adı | 31st IEEE Conference on Signal Processing and Communications Applications, SIU 2023 |
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| ???event.eventtypes.event.conference??? | 31st IEEE Conference on Signal Processing and Communications Applications, SIU 2023 |
|---|---|
| Ülke/Bölge | Turkey |
| Şehir | Istanbul |
| Periyot | 5/07/23 → 8/07/23 |
Bibliyografik not
Publisher Copyright:© 2023 IEEE.
Keywords
- GaN (HEMT)
- high efficiency power amplifier
- high power power amplifier
- wideband power amplifier