Fully Active Meminductor Emulator Circuit

This work introduces an active-only architecture for a meminductor emulator, where the required capacitive behavior is derived solely from the inherent gate capacitances of MOS devices, removing the need for any external capacitors. By avoiding passive elements, the proposed approach notably decreases the silicon area demanded in IC implementations. Validation through Cadence-based simulations using a 0.18 μm CMOS process demonstrates that the practical behavior of the circuit aligns well with the theoretical model and confirms its viability.