Frequency dependent electrical and dielectric properties of the Au/(RuO₂:PVC)/n-Si (MPS) structures

In this study, the electrical and dielectric characteristics of the Au/(RuO₂:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/ω) measurements in wide voltage and frequency ranges (±4 V, 5 kHz – 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (N_D), diffusion potential (V_D), depletion layer thickness (W_D), Fermi energy level (E_F), barrier height (Φ_B), and maximum electric field (E_m) were extracted for each measured frequency. The Φ_B, W_D, and E_F values are increasing with increased frequency, while N_D and E_m exponentially decrease. The surface-states (N_SS) were evaluated using the low–high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan δ), electrical conductivity (σ_ac), real and imaginary parts of ε*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the N_SS, and RuO₂:PVC organic interlayer are more effective on C and G/ω measurements.