First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Osman Ceylan; H. Bulent Yagci; Selcuk Paker

doi:10.1109/TELFOR48224.2019.8971140

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Osman Ceylan
, H. Bulent Yagci
, Selcuk Paker

Elektronik ve Hab.Müh.Bölümü

Maury Microwave, Inc.

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

1 Atıf (Scopus)

Özet

The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	27th Telecommunications Forum, TELFOR 2019
Yayınlayan	Institute of Electrical and Electronics Engineers Inc.
ISBN (Elektronik)	9781728147895
DOI'lar	https://doi.org/10.1109/TELFOR48224.2019.8971140
Yayın durumu	Yayınlandı - Kas 2019
Etkinlik	27th Telecommunications Forum, TELFOR 2019 - Belgrade, Serbia Süre: 26 Kas 2019 → 27 Kas 2019

Yayın serisi

Adı	27th Telecommunications Forum, TELFOR 2019

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	27th Telecommunications Forum, TELFOR 2019
Ülke/Bölge	Serbia
Şehir	Belgrade
Periyot	26/11/19 → 27/11/19

Bibliyografik not

Publisher Copyright:
© 2019 IEEE.

Finansman

This study is supported by Istanbul Technical University (Grant Number 37348), and TUBITAK (The Scientific and Technological Research Council of Turkey), 2211/A and 2214/A programs.

Finansörler	Finansör numarası
TUBITAK
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu	2211/A
Istanbul Teknik Üniversitesi	37348

Belgeye Erişim

10.1109/TELFOR48224.2019.8971140

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@inproceedings{6219acc0b5b44ea4aa1261be76e5a318,

title = "First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT",

abstract = "The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.",

keywords = "GaN HEMT, X-band, phase response, power amplifier, sensitivity",

author = "Osman Ceylan and Yagci, \{H. Bulent\} and Selcuk Paker",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 27th Telecommunications Forum, TELFOR 2019 ; Conference date: 26-11-2019 Through 27-11-2019",

year = "2019",

month = nov,

doi = "10.1109/TELFOR48224.2019.8971140",

language = "English",

series = "27th Telecommunications Forum, TELFOR 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "27th Telecommunications Forum, TELFOR 2019",

address = "United States",

}

Ceylan, O, Yagci, HB & Paker, S 2019, First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT. in 27th Telecommunications Forum, TELFOR 2019., 8971140, 27th Telecommunications Forum, TELFOR 2019, Institute of Electrical and Electronics Engineers Inc., 27th Telecommunications Forum, TELFOR 2019, Belgrade, Serbia, 26/11/19. https://doi.org/10.1109/TELFOR48224.2019.8971140

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT. / Ceylan, Osman; Yagci, H. Bulent; Paker, Selcuk.
27th Telecommunications Forum, TELFOR 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8971140 (27th Telecommunications Forum, TELFOR 2019).

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

TY - GEN

T1 - First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

AU - Ceylan, Osman

AU - Yagci, H. Bulent

AU - Paker, Selcuk

PY - 2019/11

Y1 - 2019/11

N2 - The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

AB - The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

KW - GaN HEMT

KW - X-band

KW - phase response

KW - power amplifier

KW - sensitivity

UR - https://www.scopus.com/pages/publications/85079318700

U2 - 10.1109/TELFOR48224.2019.8971140

DO - 10.1109/TELFOR48224.2019.8971140

M3 - Conference contribution

AN - SCOPUS:85079318700

T3 - 27th Telecommunications Forum, TELFOR 2019

BT - 27th Telecommunications Forum, TELFOR 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 27th Telecommunications Forum, TELFOR 2019

Y2 - 26 November 2019 through 27 November 2019

ER -

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Özet

Yayın serisi

???event.eventtypes.event.conference???

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap