Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

H. J.W. Zandvliet; O. Gurlu; R. Van Gastel; Bene Poelsema

doi:10.1103/PhysRevB.69.125311

Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

H. J.W. Zandvliet, O. Gurlu, R. Van Gastel, Bene Poelsema

University of Twente

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

9 Atıf (Scopus)

Özet

We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local S_A and S_B step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

Orijinal dil	İngilizce
Dergi	Physical Review B - Condensed Matter and Materials Physics
Hacim	69
Basın numarası	12
DOI'lar	https://doi.org/10.1103/PhysRevB.69.125311
Yayın durumu	Yayınlandı - 12 Mar 2004
Harici olarak yayınlandı	Evet

Belgeye Erişim

10.1103/PhysRevB.69.125311

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Alıntı Yap

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abstract = "We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.",

author = "Zandvliet, {H. J.W.} and O. Gurlu and {Van Gastel}, R. and Bene Poelsema",

year = "2004",

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T1 - Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

AU - Zandvliet, H. J.W.

AU - Gurlu, O.

AU - Van Gastel, R.

AU - Poelsema, Bene

PY - 2004/3/12

Y1 - 2004/3/12

N2 - We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

AB - We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

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U2 - 10.1103/PhysRevB.69.125311

DO - 10.1103/PhysRevB.69.125311

M3 - Article

AN - SCOPUS:2342440146

SN - 1098-0121

VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

ER -

Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

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