Özet
Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.
| Orijinal dil | İngilizce |
|---|---|
| Makale numarası | 066101 |
| Sayfa (başlangıç-bitiş) | 066101-1-066101-4 |
| Dergi | Physical Review Letters |
| Hacim | 93 |
| Basın numarası | 6 |
| DOI'lar | |
| Yayın durumu | Yayınlandı - 6 Ağu 2004 |
| Harici olarak yayınlandı | Evet |
Finansman
This work is financially supported by Stichting Fundamental Onderzoek der Materie (FOM) of the Netherlands.
| Finansörler |
|---|
| Stichting voor Fundamenteel Onderzoek der Materie |
Parmak izi
Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy' araştırma başlıklarına git. Birlikte benzersiz bir parmak izi oluştururlar.Alıntı Yap
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