Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy

Oguzhan Gurlu*, Harold J.W. Zandvliet, Bene Poelsema

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: Dergiye katkıMakalebilirkişi

62 Atıf (Scopus)

Özet

Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.

Orijinal dilİngilizce
Makale numarası066101
Sayfa (başlangıç-bitiş)066101-1-066101-4
DergiPhysical Review Letters
Hacim93
Basın numarası6
DOI'lar
Yayın durumuYayınlandı - 6 Ağu 2004
Harici olarak yayınlandıEvet

Finansman

This work is financially supported by Stichting Fundamental Onderzoek der Materie (FOM) of the Netherlands.

FinansörlerFinansör numarası
Stichting voor Fundamenteel Onderzoek der Materie

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