Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

Fahrettin Yakuphanoglu; B. Filiz Şenkal

doi:10.1016/j.synthmet.2008.05.011

Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

Fahrettin Yakuphanoglu^*
, B. Filiz Şenkal

^*Bu çalışma için yazışmadan sorumlu yazar

Kimya Bölümü

Firat University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

11 Atıf (Scopus)

Özet

The charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height, diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 × 10⁶ Ω, respectively. The photocurrent for the device was found to be 0.857 μA. The open circuit voltage (V_oc = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (V_oc = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	821-825
Sayfa sayısı	5
Dergi	Synthetic Metals
Hacim	158
Basın numarası	21-24
DOI'lar	https://doi.org/10.1016/j.synthmet.2008.05.011
Yayın durumu	Yayınlandı - Ara 2008

Finansman

This work was supported by the National Boron Research Institute (BOREN) (Project Number: BOREN-2006-26-Ç25-19). Authors wish to thank BOREN.

Finansörler	Finansör numarası
Ulusal Bor Araştırma Enstitüsü	BOREN-2006-26-Ç25-19

BM SKH

Bu sonuç, aşağıdaki Sürdürülebilir Kalkınma Hedefine/Hedeflerine katkıda bulunur

SKH 7 Erişilebilir ve Temiz Enerji

Belgeye Erişim

10.1016/j.synthmet.2008.05.011

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications",

abstract = "The charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height, diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 × 106 Ω, respectively. The photocurrent for the device was found to be 0.857 μA. The open circuit voltage (Voc = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (Voc = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications.",

keywords = "Diode, Organic layer, Photovoltaic properties",

author = "Fahrettin Yakuphanoglu and {\c S}enkal, \{B. Filiz\}",

year = "2008",

month = dec,

doi = "10.1016/j.synthmet.2008.05.011",

language = "English",

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journal = "Synthetic Metals",

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TY - JOUR

T1 - Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

AU - Yakuphanoglu, Fahrettin

AU - Şenkal, B. Filiz

PY - 2008/12

Y1 - 2008/12

N2 - The charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height, diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 × 106 Ω, respectively. The photocurrent for the device was found to be 0.857 μA. The open circuit voltage (Voc = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (Voc = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications.

AB - The charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height, diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 × 106 Ω, respectively. The photocurrent for the device was found to be 0.857 μA. The open circuit voltage (Voc = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (Voc = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications.

KW - Diode

KW - Organic layer

KW - Photovoltaic properties

UR - https://www.scopus.com/pages/publications/57649231842

U2 - 10.1016/j.synthmet.2008.05.011

DO - 10.1016/j.synthmet.2008.05.011

M3 - Article

AN - SCOPUS:57649231842

SN - 0379-6779

VL - 158

SP - 821

EP - 825

JO - Synthetic Metals

JF - Synthetic Metals

IS - 21-24

ER -

Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

Özet

Finansman

BM SKH

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap