TY - JOUR
T1 - Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe 2 thin films
AU - Karaagac, H.
AU - Parlak, M.
PY - 2009/3/15
Y1 - 2009/3/15
N2 - Polycrystalline AgGaSe 2 thin films were deposited by using single crystalline powder of AgGaSe 2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 °C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga 2 Se 3 , GaSe, and AgGaSe 2 phases but with increasing annealing temperature AgGaSe 2 was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag 2 Se, AgGaSe 2 , Ga, Ga 2 O 3 , Ga 2 Se 3 , Se and SeO 2 were identified at the surface (or near the surface) of AgGaSe 2 thin films depending on the annealing temperature, and considerable changes in the phases were observed.
AB - Polycrystalline AgGaSe 2 thin films were deposited by using single crystalline powder of AgGaSe 2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 °C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga 2 Se 3 , GaSe, and AgGaSe 2 phases but with increasing annealing temperature AgGaSe 2 was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag 2 Se, AgGaSe 2 , Ga, Ga 2 O 3 , Ga 2 Se 3 , Se and SeO 2 were identified at the surface (or near the surface) of AgGaSe 2 thin films depending on the annealing temperature, and considerable changes in the phases were observed.
KW - AgGaSe
KW - Chalcopyrite compounds
KW - Scanning electron microscopy
KW - X-ray diffraction
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=60949107600&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2009.01.054
DO - 10.1016/j.apsusc.2009.01.054
M3 - Article
AN - SCOPUS:60949107600
SN - 0169-4332
VL - 255
SP - 5999
EP - 6006
JO - Applied Surface Science
JF - Applied Surface Science
IS - 11
ER -