Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe 2 thin films

H. Karaagac, M. Parlak*

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: ???type-name???Makalebilirkişi

17 Atıf (Scopus)

Özet

Polycrystalline AgGaSe 2 thin films were deposited by using single crystalline powder of AgGaSe 2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 °C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga 2 Se 3 , GaSe, and AgGaSe 2 phases but with increasing annealing temperature AgGaSe 2 was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag 2 Se, AgGaSe 2 , Ga, Ga 2 O 3 , Ga 2 Se 3 , Se and SeO 2 were identified at the surface (or near the surface) of AgGaSe 2 thin films depending on the annealing temperature, and considerable changes in the phases were observed.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)5999-6006
Sayfa sayısı8
DergiApplied Surface Science
Hacim255
Basın numarası11
DOI'lar
Yayın durumuYayınlandı - 15 Mar 2009
Harici olarak yayınlandıEvet

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