Donor-acceptor pair recombination in AgIn5S8 single crystals

N. M. Gasanly; A. Serpengüzel; A. Aydinli; O. Gürlü; I. Yilmaz

doi:10.1063/1.369660

Donor-acceptor pair recombination in AgIn₅S₈ single crystals

N. M. Gasanly, A. Serpengüzel, A. Aydinli^*, O. Gürlü, I. Yilmaz

^*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

47 Atıf (Scopus)

Özet

Photoluminescence (PL) spectra of AgIn₅S₈ single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV al 10 K and an excitation intensity of 0.97 W cm^-2. The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	3198-3201
Sayfa sayısı	4
Dergi	Journal of Applied Physics
Hacim	85
Basın numarası	6
DOI'lar	https://doi.org/10.1063/1.369660
Yayın durumu	Yayınlandı - 15 Mar 1999
Harici olarak yayınlandı	Evet

Belgeye Erişim

10.1063/1.369660

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "Donor-acceptor pair recombination in AgIn5S8 single crystals",

abstract = "Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV al 10 K and an excitation intensity of 0.97 W cm-2. The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band.",

author = "Gasanly, {N. M.} and A. Serpeng{\"u}zel and A. Aydinli and O. G{\"u}rl{\"u} and I. Yilmaz",

year = "1999",

month = mar,

day = "15",

doi = "10.1063/1.369660",

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volume = "85",

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T1 - Donor-acceptor pair recombination in AgIn5S8 single crystals

AU - Gasanly, N. M.

AU - Serpengüzel, A.

AU - Aydinli, A.

AU - Gürlü, O.

AU - Yilmaz, I.

PY - 1999/3/15

Y1 - 1999/3/15

N2 - Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV al 10 K and an excitation intensity of 0.97 W cm-2. The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band.

AB - Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV al 10 K and an excitation intensity of 0.97 W cm-2. The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band.

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U2 - 10.1063/1.369660

DO - 10.1063/1.369660

M3 - Article

AN - SCOPUS:0000596066

SN - 0021-8979

VL - 85

SP - 3198

EP - 3201

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6