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Distributed wideband power amplifier using reactive coupled line feedback structure

  • Istanbul Technical University
  • Isik University
  • Istanbul University

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde BölümKonferans katkısıbilirkişi

4 Atıf (Scopus)

Özet

A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 dB. A reactive distributed shunt feedback structure is introduced and implemented by means of microstrip coupled lines. Also, fully distributed input and output impedance matching networks are implemented. The design and simulations are accomplished by advanced design system tool (ADS). The design has undergone large signal, small signal and electromagnetic analysis (EM-simulation). At VDS = 28 V and IDS = 340 mA. Down to the output power back-off of 5 dB at 4.5 GHz, power performance obtained with PAE higher than 35% where the maximum output power is 40.4 dBm.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıConference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015
YayınlayanInstitute of Electrical and Electronics Engineers Inc.
Sayfalar91-94
Sayfa sayısı4
ISBN (Elektronik)9781467365062
DOI'lar
Yayın durumuYayınlandı - 17 Mar 2016
Etkinlik2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015 - Tehran, Iran, Islamic Republic of
Süre: 5 Kas 20156 Kas 2015

Yayın serisi

AdıConference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015

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???event.eventtypes.event.conference???2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015
Ülke/BölgeIran, Islamic Republic of
ŞehirTehran
Periyot5/11/156/11/15

Bibliyografik not

Publisher Copyright:
© 2015 IEEE.

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