Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements

S. Nar; O. Sahin; S. Horoz

Determination optimum ni concentration in Zn₂SnO₄/Ni-Doped Sb₂S₃ thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements

S. Nar
, O. Sahin
, S. Horoz^*

^*Bu çalışma için yazışmadan sorumlu yazar

Siirt University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

4 Atıf (Scopus)

Özet

In this present study, Ni-doped Sb₂S₃ thin films with different Ni concentrations were synthesized on Zn₂SnO₄ coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn₂SnO₄ /Ni-doped Sb₂S₃ thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb₂S₃ thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb₂S₃: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	491-497
Sayfa sayısı	7
Dergi	Chalcogenide Letters
Hacim	15
Basın numarası	10
Yayın durumu	Yayınlandı - Eki 2018
Harici olarak yayınlandı	Evet

Bibliyografik not

Publisher Copyright:
© 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.

Finansman

This study supported by the Scientific and Technological Research Council of Turkey. (TUBITAK) (Project number: 117F193).

Finansörler	Finansör numarası
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu	117F193

BM SKH

Bu sonuç, aşağıdaki Sürdürülebilir Kalkınma Hedefine/Hedeflerine katkıda bulunur

SKH 7 Erişilebilir ve Temiz Enerji

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Parmak izi

Determination optimum ni concentration in Zn₂SnO₄/Ni-Doped Sb₂S₃ thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements' araştırma başlıklarına git. Birlikte benzersiz bir parmak izi oluştururlar.

Alıntı Yap

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title = "Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements",

abstract = "In this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn2SnO4 coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25\%, 0.5\%, 0.75\%, and 1\%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn2SnO4 /Ni-doped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75\%) thin film has the highest IPCE (\%) and power conversion efficiency values compare to other Ni concentrations.",

keywords = "Characterization, Doping, Photovoltaic, Synthesis, Thin film",

author = "S. Nar and O. Sahin and S. Horoz",

year = "2018",

month = oct,

language = "English",

volume = "15",

pages = "491--497",

journal = "Chalcogenide Letters",

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number = "10",

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TY - JOUR

T1 - Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements

AU - Nar, S.

AU - Sahin, O.

AU - Horoz, S.

PY - 2018/10

Y1 - 2018/10

N2 - In this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn2SnO4 coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn2SnO4 /Ni-doped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations.

AB - In this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn2SnO4 coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn2SnO4 /Ni-doped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations.

KW - Characterization

KW - Doping

KW - Photovoltaic

KW - Synthesis

KW - Thin film

UR - https://www.scopus.com/pages/publications/85056348079

M3 - Article

AN - SCOPUS:85056348079

SN - 1584-8663

VL - 15

SP - 491

EP - 497

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 10

ER -