Design of Cryogenic LNAs for High Linearity in Space Applications

Alican Çaǧlar, Mustafa Berke Yelten*

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: ???type-name???Makalebilirkişi

26 Atıf (Scopus)


This paper presents a 2 GHz low noise amplifier (LNA) implemented in 180 nm complementary metal oxide semiconductor (CMOS) technology designed for cryogenic temperatures as well as its measurement results at both room temperature and 77 K. A modified approach to classical LNA design has been adopted. The matching of the LNA has been performed by external discrete components such that S11 and S22 of the LNA between 2.025 and 2.12 GHz (designated for space communications) are below -10 dB at both 77 K and 297 K. At 77 K, the designed LNA achieves 18 dB gain, 35.4 K noise temperature, and +3 dBm IIP3. IIP3 performance of the LNA at cryogenic temperatures has been analyzed in particular, and the linearity improvement by using the proposed approach has been demonstrated. Moreover, the designed LNA was irradiated with 650 krad gamma radiation. Even though the LNA is not specifically radiation-hardened, no degradation on its performance has been observed.

Orijinal dilİngilizce
Makale numarası8844972
Sayfa (başlangıç-bitiş)4619-4627
Sayfa sayısı9
DergiIEEE Transactions on Circuits and Systems I: Regular Papers
Basın numarası12
Yayın durumuYayınlandı - Ara 2019

Bibliyografik not

Publisher Copyright:
© 2004-2012 IEEE.


Manuscript received February 1, 2019; revised June 17, 2019 and July 19, 2019; accepted August 15, 2019. Date of publication September 19, 2019; date of current version December 6, 2019. This work was supported in part by the Technological Research Council of Turkey under Project TÜB˙TAK 1001 215E080 and in part by the Department of Scientific Research Projects, Istanbul Technical University, under Project 39465. This article was recommended by Associate Editor E. Bonizzoni. (Corresponding author: Mustafa Berke Yelten.) The authors are with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey (e-mail: [email protected]; [email protected]).

FinansörlerFinansör numarası
Technological Research Council of TurkeyTÜB˙TAK 1001 215E080
Istanbul Teknik Üniversitesi39465

    Parmak izi

    Design of Cryogenic LNAs for High Linearity in Space Applications' araştırma başlıklarına git. Birlikte benzersiz bir parmak izi oluştururlar.

    Alıntı Yap