@inproceedings{dae66b0469b341f1a5b4a1af6f51bd08,
title = "Decade bandwidth single and cascaded travelling wave medium power amplifiers using SiGe HBTs",
abstract = "This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35μm SiGe HBT process. The first amplifier realized is a 1.3x1mm2 device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is 1.8x2.3mm2 device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2-2.2GHz.",
keywords = "SiGe HBT, Wideband Power Amplifiers",
author = "Mustafa Sayginer and Metin Yazgi and Ali Toker and Hakan Kuntman and Virdee, {Bal S.}",
year = "2011",
doi = "10.1109/ECCTD.2011.6043833",
language = "English",
isbn = "9781457706189",
series = "2011 20th European Conference on Circuit Theory and Design, ECCTD 2011",
pages = "821--824",
booktitle = "2011 20th European Conference on Circuit Theory and Design, ECCTD 2011",
note = "2011 20th European Conference on Circuit Theory and Design, ECCTD 2011 ; Conference date: 29-08-2011 Through 31-08-2011",
}