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Computer Simulation of 3D Complex Material-Based Devices

  • M. Prishvin
  • , V. Tabatadze
  • , I. Petoev
  • , D. Kakulia
  • , R. Zaridze
  • Ivane Javakhishvili Tbilisi State University

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde BölümKonferans katkısıbilirkişi

Özet

Several aspects of computer-aided modeling and simulation of 3D complex material PBG devices are discussed. Software package for simulation, analysis, design and optimization of wide variety such devices has been created. Periodic structures of doped elements responsible for complex properties of integral objects are the basis of devices. It is proposed, that complex dielectric properties (ε, μ) of the main part, together with specially fitted doped elements create the rest admittances (α and β ) of the meta-materials. The need of 3D numerical simulations and design are discussed. The Method of Auxiliary Sources (MAS) [1] is applied to simulate EM field distribution in microwave and THz frequency ranges.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıEMC Europe 2009 Workshop, EMC 2009 - Proceedings
YayınlayanInstitute of Electrical and Electronics Engineers Inc.
Sayfalar88-90
Sayfa sayısı3
ISBN (Elektronik)9798331500054
DOI'lar
Yayın durumuYayınlandı - 2009
Harici olarak yayınlandıEvet
EtkinlikEMC Europe 2009 Workshop, EMC 2009 - Athens, Greece
Süre: 11 Haz 200912 Haz 2009

Yayın serisi

AdıEMC Europe 2009 Workshop, EMC 2009 - Proceedings

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???event.eventtypes.event.conference???EMC Europe 2009 Workshop, EMC 2009
Ülke/BölgeGreece
ŞehirAthens
Periyot11/06/0912/06/09

Bibliyografik not

Publisher Copyright:
© 2009 EMC Europe 2009 Workshop, EMC 2009 - Proceedings. All rights reserved.

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