Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions

N. Baydogan; Y. Gokce; M. Baydogan; H. Cimenoglu

doi:10.4028/www.scientific.net/DDF.334-335.349

Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions

N. Baydogan, Y. Gokce, M. Baydogan, H. Cimenoglu

Istanbul Technical University

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

1 Atıf (Scopus)

Özet

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	Diffusion in Solids and Liquids VIII
Yayınlayan	Trans Tech Publications Ltd
Sayfalar	349-352
Sayfa sayısı	4
Hacim	334-335
ISBN (Basılı)	9783037856628
DOI'lar	https://doi.org/10.4028/www.scientific.net/DDF.334-335.349
Yayın durumu	Yayınlandı - 2013
Etkinlik	8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012 - Istanbul, Turkey Süre: 25 Haz 2012 → 29 Haz 2012

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???event.eventtypes.event.conference???	8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012
Ülke/Bölge	Turkey
Şehir	Istanbul
Periyot	25/06/12 → 29/06/12

Belgeye Erişim

10.4028/www.scientific.net/DDF.334-335.349

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@inproceedings{5378ccb066b44cc999dc9c35f6e3976e,

title = "Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions",

abstract = "ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.",

keywords = "Capacitance-voltage characteristics, Sol-gel, Zinc oxide",

author = "N. Baydogan and Y. Gokce and M. Baydogan and H. Cimenoglu",

year = "2013",

doi = "10.4028/www.scientific.net/DDF.334-335.349",

language = "English",

isbn = "9783037856628",

volume = "334-335",

pages = "349--352",

booktitle = "Diffusion in Solids and Liquids VIII",

publisher = "Trans Tech Publications Ltd",

address = "Switzerland",

note = "8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012 ; Conference date: 25-06-2012 Through 29-06-2012",

}

Baydogan, N, Gokce, Y, Baydogan, M & Cimenoglu, H 2013, Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions. in Diffusion in Solids and Liquids VIII. hac. 334-335, Trans Tech Publications Ltd, pp. 349-352, 8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012, Istanbul, Turkey, 25/06/12. https://doi.org/10.4028/www.scientific.net/DDF.334-335.349

TY - GEN

T1 - Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions

AU - Baydogan, N.

AU - Gokce, Y.

AU - Baydogan, M.

AU - Cimenoglu, H.

PY - 2013

Y1 - 2013

N2 - ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

AB - ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

KW - Capacitance-voltage characteristics

KW - Sol-gel

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84879811452&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/DDF.334-335.349

DO - 10.4028/www.scientific.net/DDF.334-335.349

M3 - Conference contribution

AN - SCOPUS:84879811452

SN - 9783037856628

VL - 334-335

SP - 349

EP - 352

BT - Diffusion in Solids and Liquids VIII

PB - Trans Tech Publications Ltd

T2 - 8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012

Y2 - 25 June 2012 through 29 June 2012

ER -

Capacitance-voltage (C-V) properties of ZnO:Al/p-Si heterojunctions

Özet

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Belgeye Erişim

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