Broadband performance assessment of a microwave power transistor employing the real frequency technique

Sedat Kilinc*, Malik Ehsan Ejaz, Binboga Siddik Yarman, Serdar Ozoguz, Saket Srivastava, Edmond Nurellari

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4 Atıf (Scopus)

Özet

Generation of proper source/load-pull impedances for a selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “real frequency line-segment technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF power-intake and power-delivery capacity of the amplifier. During the numerical performance assessments process, a robust tool called “virtual gain optimization” is presented. Finally, a new definition called “power performance product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source-/load-pull data and to assess the gain-bandwidth limitations of the given source/load-pull impedances for a 45 W-GaN power transistor, namely, “Wolfspeed CG2H40045” over 0.8–3.8 GHz bandwidth.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)3725-3748
Sayfa sayısı24
DergiInternational Journal of Circuit Theory and Applications
Hacim50
Basın numarası11
DOI'lar
Yayın durumuYayınlandı - Kas 2022

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Publisher Copyright:
© 2022 John Wiley & Sons Ltd.

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