Bi-directional Distributed Amplifier in 0.11 μm CMOS Technology

Merve Gölçek Yazici*, Asim Kepkep*, Metin Yazgi

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde BölümKonferans katkısıbilirkişi

Özet

This paper presents and compares two different design approaches for bi-directional distributed amplifiers (BDDA) in 0.11 μm CMOS technology. Distributed amplifiers (DA) and BDDAs can be designed starting from T-type and π- type unit cells of artificial transmission lines (ATL). This paper presents π- type topology for BDDAs and compares with T-type BDDAs in terms of gain, bandwidth and chip area. Designing DAs and BDDAs with π- type unit cells provide advantages from two different perspectives. Firstly, π- type BDDAs can be designed with more gm - cells than T-type BDDAs with the approximately same chip area. This provides higher gain without the cost of chip area because a π- type unit cell has one less inductor than a T-type unit cell. Secondly, smaller-sized gm - cells can be designed owing to extra active cells in π- type BDDAs in order to increase the bandwidth of BDDAs. Hence, π- type BDDA can provide higher bandwidth with the same gain and the chip area if desired. The simulated gains of BDDA with three T-type and four π- type unit cells are 8.5 dB and 10 dB at 2-19.5 GHz. In addition, BDDA built using π- type unit cells with active cells equivalent to four fully active gm - cells is designed with smaller gm - cells to achieve higher bandwidth. Thus, 8.5 dB gain is obtained over 2-23 GHz. The chip areas are almost the same as the BDDA with three T-type unit cells for all versions of designed π- type BDDAs.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıPRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings
YayınlayanInstitute of Electrical and Electronics Engineers Inc.
Sayfalar333-336
Sayfa sayısı4
ISBN (Elektronik)9798350303209
DOI'lar
Yayın durumuYayınlandı - 2023
Etkinlik18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023 - Valencia, Spain
Süre: 18 Haz 202321 Haz 2023

Yayın serisi

AdıPRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings

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???event.eventtypes.event.conference???18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023
Ülke/BölgeSpain
ŞehirValencia
Periyot18/06/2321/06/23

Bibliyografik not

Publisher Copyright:
© 2023 IEEE.

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