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Behavioral modeling for low-voltage pentacene-based OTFTs and their implementations for organic logic circuits

  • Nihat Akkan*
  • , Mustafa Altun
  • , Herman Sedef
  • *Bu çalışma için yazışmadan sorumlu yazar
  • Yildiz Technical University

Araştırma sonucu: Dergiye katkıMakalebilirkişi

1 Atıf (Scopus)

Özet

We present a behavioral compact model and its implementation for low-voltage pentacene-based organic thin film transistors (OTFTs) using industry standard BSIM4 (Berkeley Short-channel IGFET Model) in LTspice platform. First, we simplify the number of BSIM4 model parameters according to the device structure. On the other hand, we adapt the BSIM4 mobility equation to OTFT and also involve the off-current using two behavioral current sources. Then, we perform metaheuristics-based optimization to extract the related BSIM4 model parameters together with additional four parameters, introduced in this work, fitting the modified model to the experimental data of an OTFT, using pentacene active layer. Finally, we implement the behavioral compact model in LTspice and validate its usage for low-voltage pentacene-based OTFTs comparing the experimental and modeled current–voltage curves. In this study, we also successfully simulate OTFT implementations of a Pseudo-E inverter, a Pseudo-E NAND gate, and a 1-bit full adder circuit based on NAND gates using our behavioral OTFT model and then investigate the static and dynamic performance parameters of these circuits. The supply voltage is 3 V and maximum frequency of the inputs is 500 Hz in the simulations.

Orijinal dilİngilizce
Makale numarası101317
DergiEngineering Science and Technology, an International Journal
Hacim37
DOI'lar
Yayın durumuYayınlandı - Oca 2023

Bibliyografik not

Publisher Copyright:
© 2022 Karabuk University

Finansman

This work was supported by the Research Fund of Yildiz Technical University (Project No. FDK-2018-3477). This work was also supported in part by the Tubitak 1001 under Project 116E250.

FinansörlerFinansör numarası
Yildiz Teknik Üniversitesi116E250, FDK-2018-3477

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