Assessment of Strain Relaxation and Oxygen Vacancy Migration near Grain Boundary in SrTiO3Bicrystals by Second Harmonic Generation

Onur Kurt, Tony Le, Sulata K. Sahu, Clive A. Randall, Yuhang Ren*

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Özet

Mesoscopic structural distortions that result from ionic space charge accumulation near a grain boundary have impacts on the electrical conductivity and optical properties of perovskite oxides. Here, we report on our study that address the correlation between strain distribution and oxygen vacancy migration and pile up in undoped SrTiO3 (STO) bicrystals using local probing via the optical second harmonic generation (SHG) under electrical degradation. Comprehensive SHG measurements were taken near the grain boundary in both reflection and transmission geometries. While we confirmed a 10°-tilted grain boundary and an anisotropic strain distribution in the pristine bicrystal, we also revealed oxygen vacancies are confined and accumulated near the strain-imposed boundary in the electrically degraded bicrystal. During the degradation process, oxygen vacancies migrate, and electronic charge can be injected. With the grain boundary acting as a barrier to the oxygen vacancy migration, there can be a strain gradient on both sides of the grain boundary, and also with the charge an internal electrical field is developed. Our results strongly indicate that oxygen vacancies are preferentially formed and are segregated at the grain boundary where the strain accumulates and impedes oxygen vacancy diffusion under a concentration gradient.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)11892-11901
Sayfa sayısı10
DergiJournal of Physical Chemistry C
Hacim124
Basın numarası22
DOI'lar
Yayın durumuYayınlandı - 4 Haz 2020
Harici olarak yayınlandıEvet

Bibliyografik not

Publisher Copyright:
Copyright © 2020 American Chemical Society.

Finansman

This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342).

FinansörlerFinansör numarası
Air Force Office of Scientific ResearchFA9550-17-1-0342, FA9550-17-1-0339

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