Analog negative-bias-temperature-instability monitoring circuit

Mustafa Berke Yelten*, Paul D. Franzon, Michael B. Steer

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8 Atıf (Scopus)

Özet

A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V -1 and is demonstrated through electrothermal stress on the amplifier circuit.

Orijinal dilİngilizce
Makale numarası6095343
Sayfa (başlangıç-bitiş)177-179
Sayfa sayısı3
DergiIEEE Transactions on Device and Materials Reliability
Hacim12
Basın numarası1
DOI'lar
Yayın durumuYayınlandı - Mar 2012
Harici olarak yayınlandıEvet

Finansman

Manuscript received August 30, 2011; revised October 24, 2011; accepted November 21, 2011. Date of publication December 5, 2011; date of current version March 7, 2012. This work was supported in part by the Self-Healing Mixed-Signal Integrated Circuits program of the Defense Advanced Research Projects Agency and in part by the prime contractor Raytheon Company under Contract/Grant FA8650-09-C-7925.

FinansörlerFinansör numarası
Defense Advanced Research Projects Agency
Raytheon CompanyFA8650-09-C-7925

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